According to the Taiwan media DIGITIMES reported in April this year, the 300 R&D equipment required for the Hefei Changxin 12-inch memory manufacturing base has been fully in place. After the installation is completed, the trial production will be fully launched from the second half of 2018.
On April 15, Wang Ningguo, chairman of Changxin Storage Technology Co., Ltd. and CEO of Ruili Integrated Circuit Co., Ltd., said at the Hefei IC project launch conference that the first phase of Hefei Changxin DRAM memory chip was completed in January 2018. Construction of a plant and installation of equipment; production of 8GB DDR4 engineering samples will be started by the end of 2018; 20,000 pieces of memory per month will be realized by the end of 2019; second plant will be planned and constructed from 2020; 17nm process technology will be completed in 2021. Research and development. Wang Ningguo also expressed the expectation that the future will use the Changxin Ruili DRAM IDM platform to vigorously support the research and development and industrialization of domestic semiconductor equipment and materials.
Judging from the time of production of Hefei Changxin, everything is in the company's plan. In just two years, the company has also achieved a lot of accumulation. Wang Ningguo said that Hefei Changxin has accumulated a lot in the fields of components, design, reticle, manufacturing and testing in the past two years. By the end of 2017, 354 patents had been applied, and 1155 patents were planned to be applied in 2018: 126 patents for component applications, 144 design patents, and 224 imaging patents were planned. By the end of 2018, the total number of patent applications is 1,509.
According to Tencent Technology, from the beginning of this year to the present, the price of NAND flash memory chips in the market has weakened, but the price of DRAM memory continues to rise. According to industry analysts, Samsung, as the world's leading DRAM memory manufacturer, seems to be interested in reducing DRAM memory, thus maintaining the high price of DRAM and even rising further. The fundamental purpose is to obtain as much revenue and profit as possible in the DRAM market.
Some people in the semiconductor industry also pointed out that before this, the market also reported that the three 18nm process memory chips had a yield problem, which took two to three months to be solved, which may lead to the shortage of high-end DRAM memory chip market. phenomenon. It is worth mentioning that this is a rumor that the three 18nm process memory products began to appear two years later, so it is inevitable that people will not be suspicious of Samsung. Another analyst said that the Samsung 18nm chip will lead to production cuts due to yield problems, which may be just an excuse for Samsung to suspend production to control product supply.
Recently, an informed source observed in the semiconductor industry that Hefei Changxin, one of the three major domestic memory giants, has officially voted for the product specification of 8Gb LPDDR4; this is also a milestone in the domestic DRAM memory chip industry plus the previous Yangtze River storage. A breakthrough was announced in the field of 3D NAND flash memory; it can be said that domestic memory manufacturers have made new progress in promoting the localization of memory.